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MRF89XAM9A
2.3 PCB Antenna
The PCB antenna is fabricated on the top copper trace.
Figure 2-10 shows the PCB antenna dimensions. The
matching circuitry matches the impedance of the
antenna with the SAW filter and MRF89XA transceiver
IC.
layers below the antenna have no copper traces. The
ground and power planes under the components serve
as a counterpoise to the PCB antenna. Additional
ground plane on the host PCB will substantially
enhance the performance of the module. For best
FIGURE 2-10:
PCB ANTENNA
DIMENSIONS
performance, place the module on the host PCB by
following the recommendations in Section 1.2,
16.8mm
1.0mm
Mounting Details .
The PCB antenna was designed and simulated using
Ansoft Designer ? and HFSS? 3D full-wave solver
software by ANSYS, Inc. ( www.ansoft.com ). The goal
of the design was to create a compact, low-cost
antenna with the best radiation pattern. Figure 2-11
shows the PCB antenna simulation drawing and
Figure 2-12 and Figure 2-13 show the simulated 2D
and 3D radiation patterns. As shown by the radiation
patterns, the performance of the antenna is dependant
upon the orientation of the module. Figure 2-14 shows
the impedance simulation and Figure 2-15 shows the
2.5mm
8.4mm
1.1mm
0.5mm
actual impedance measurement.
The discrete
FIGURE 2-11:
PCB ANTENNA SIMULATION DRAWING
DS75017A-page 14
Preliminary
? 2011 Microchip Technology Inc.
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相关PDF资料
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相关代理商/技术参数
MRF89XAM9AT-I/RM 制造商:Microchip Technology Inc 功能描述:915 MHz Ultra Low-Power Sub-GHz Transceiver Module
MRF89XAT-I/MQ 功能描述:射频收发器 868/915/950 MHz Sub-GHz transceiver RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
MRF8HP21080HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21130HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21130HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray